Why are special precautions necessary in handling FET and CMOS devices?

FET (Field Effect Transistor) and CMOS (Complementary Metal-Oxide-Semiconductor) devices are particularly vulnerable to damage from electrostatic discharge (ESD). This sensitivity arises because the insulating layers in CMOS and FETs can easily be damaged by static electricity, which can accumulate from everyday activities or even from handling the devices without proper precautions.

When a static charge discharges into the device, it can create a voltage spike that exceeds the maximum voltage the device can tolerate, potentially leading to immediate failure or long-term degradation that compromises performance. Hence, when working with these devices, it is crucial to implement anti-static measures, such as using wrist straps, anti-static mats, and ensuring that the workspace is grounded. Understanding this characteristic is vital for anyone working with electronics to prevent costly damage and ensure reliability in circuits that utilize these types of transistors.